Nanomakers is proud to announce the publication of a new patent
which present our works about the sintering of our SiC nanopowders in very dense parts for semiconductors market
A new patent of Nanomakers (WO2022064239A1) has been published! It explains how to obtain pure sintered SiC parts. It enables densities that can be over 98%.
Our nano-silicon carbide is unique for sintering as it already has an optimal oxygen/carbon in excess ratio on each particle.
The silicon carbide from Nanomakers has the semiconductor grade purity and its surface has been modified to optimize densification during sintering. As oxygen limits densification, the presence of some carbon atoms on the surface makes it possible to remove oxygen during densification.
Contact us to try our nano SiC!