Publication d’un nouveau brevet sur le frittage du SiC

Nanomakers has published a new patent about the sintering of silicon carbide parts. Our nano SiC has some unique features which ease the densification during the sintering process.

Publication d’un nouveau brevet sur le frittage du SiC

2 May 2022

Nanomakers est fier d’annoncer la publication d’un nouveau brevet 

which present our works about the sintering of our SiC nanopowders in very dense parts for semiconductors market 

A new patent of Nanomakers (WO2022064239A1) has been published! It explains how to obtain pure sintered SiC parts. It enables densities that can be over 98%.

Our nano-silicon carbide is unique for sintering as it already has an optimal oxygen/carbon in excess ratio on each particle.

Le carbure de silicium de Nanomakers as une pureté de grade semiconducteur et sa surface a été modifiée pour optimiser la densification lors du frittage. Comme l’oxygène limite la densifcation, la présence de quelque atomes de carbone à la surface permet d’enlever l’oxygène lors de la densification.

Contact us to try our nano SiC!

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